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Hubert Enichlmair
Publication Activity (10 Years)
Years Active: 2007-2015
Publications (10 Years): 0
Top Topics
Distribution Function
Statistical Models
Maximum Likelihood
Top Venues
Microelectron. Reliab.
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Publications
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Prateek Sharma
,
Stanislav Tyaginov
,
Yannick Wimmer
,
Florian Rudolf
,
Karl Rupp
,
Hubert Enichlmair
,
J. H. Park
,
Hajdin Ceric
,
Tibor Grasser
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.
Microelectron. Reliab.
55 (9-10) (2015)
Stanislav Tyaginov
,
Ivan A. Starkov
,
Hubert Enichlmair
,
C. Jungemann
,
Jong Mun Park
,
Ehrenfried Seebacher
,
R. L. de Orio
,
Hajdin Ceric
,
Tibor Grasser
An analytical approach for physical modeling of hot-carrier induced degradation.
Microelectron. Reliab.
51 (9-11) (2011)
Stanislav Tyaginov
,
Ivan A. Starkov
,
Oliver Triebl
,
Johann Cervenka
,
C. Jungemann
,
Sara Carniello
,
Jong Mun Park
,
Hubert Enichlmair
,
Markus Karner
,
Ch. Kernstock
,
Ehrenfried Seebacher
,
Rainer Minixhofer
,
Hajdin Ceric
,
Tibor Grasser
Interface traps density-of-states as a vital component for hot-carrier degradation modeling.
Microelectron. Reliab.
50 (9-11) (2010)
Verena Vescoli
,
Jong Mun Park
,
Hubert Enichlmair
,
Martin Knaipp
,
Georg Röhrer
,
Rainer Minixhofer
,
Martin Schrems
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.
IET Circuits Devices Syst.
2 (3) (2008)
Martin Schrems
,
Martin Knaipp
,
Hubert Enichlmair
,
Verena Vescoli
,
Rainer Minixhofer
,
Ehrenfried Seebacher
,
Friedrich Peter Leisenberger
,
E. Wachmann
,
Gregor Schatzberger
,
Heimo Gensinger
Scalable High Voltage CMOS technology for Smart Power and sensor applications.
Elektrotech. Informationstechnik
125 (4) (2008)
Robert Entner
,
Tibor Grasser
,
Oliver Triebl
,
Hubert Enichlmair
,
Rainer Minixhofer
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures.
Microelectron. Reliab.
47 (4-5) (2007)
Hubert Enichlmair
,
Sara Carniello
,
Jong Mun Park
,
Rainer Minixhofer
Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor.
Microelectron. Reliab.
47 (9-11) (2007)