Jong Mun Park

Publication Activity (10 Years)

Years Active: 2003-2017
Publications (10 Years): 1

Top Topics

Cmos Technology

Top Venues

Publications

Frederic Roger, Anderson Pires Singulani, Jong Mun Park
Optical sensor process variability in a 0.18 μm high voltage CMOS technology. PATMOS (2017)
Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser
An analytical approach for physical modeling of hot-carrier induced degradation. Microelectron. Reliab. 51 (9-11) (2011)
Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser
Interface traps density-of-states as a vital component for hot-carrier degradation modeling. Microelectron. Reliab. 50 (9-11) (2010)
Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors. IET Circuits Devices Syst. 2 (3) (2008)
Hubert Enichlmair, Sara Carniello, Jong Mun Park, Rainer Minixhofer
Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor. Microelectron. Reliab. 47 (9-11) (2007)
Martin Knaipp, Jong Mun Park, Verena Vescoli
Evolution of a CMOS Based Lateral High Voltage Technology Concept. Microelectron. J. 37 (3) (2006)
Clemens Heitzinger, Alireza Sheikholeslami, Jong Mun Park, Siegfried Selberherr
A method for generating structurally aligned grids for semiconductor device simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 24 (10) (2005)
Jong Mun Park, Robert Klima, Siegfried Selberherr
High-voltage lateral trench gate SOI-LDMOSFETs. Microelectron. J. 35 (3) (2004)
Tesfaye Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr
Improving SiC lateral DMOSFET reliability under high field stress. Microelectron. Reliab. 43 (9-11) (2003)