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High-voltage lateral trench gate SOI-LDMOSFETs.

Jong Mun ParkRobert KlimaSiegfried Selberherr
Published in: Microelectron. J. (2004)
Keyphrases
  • high voltage
  • operating conditions
  • normal operation
  • partial discharge
  • data sets
  • real time
  • genetic algorithm
  • intelligent systems