R. L. de Orio

Publication Activity (10 Years)

Years Active: 2010-2024
Publications (10 Years): 6

Top Topics

Success Or Failure

Friendly Interface

Top Venues

Microelectron. Reliab.

Publications

Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. DRC (2024)
Mario Bendra, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. MIPRO (2024)
Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, Nils Petter Jørstad, B. Pruckner, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
Back-Hopping in Ultra-Scaled MRAM Cells. MIPRO (2023)
M. Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadamek, W. J. Loch, N. P. Jørstad, Siegfried Selberherr, Wolfgang Gös, Viktor Sverdlov
Spin Transfer Torques in Ultra-Scaled MRAM Cells. MIPRO (2022)
R. O. Nunes, R. L. de Orio
Operational Amplifier Performance Degradation and Time-to-Failure due to Electromigration. SBCCI (2018)
R. O. Nunes, R. L. de Orio
Study of the impact of electromigration on integrated circuit performance and reliability at design level. Microelectron. Reliab. (2017)
R. L. de Orio, Hajdin Ceric, Siegfried Selberherr
A compact model for early electromigration failures of copper dual-damascene interconnects. Microelectron. Reliab. 51 (9-11) (2011)
Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser
An analytical approach for physical modeling of hot-carrier induced degradation. Microelectron. Reliab. 51 (9-11) (2011)
R. L. de Orio, Hajdin Ceric, Siegfried Selberherr
Physically based models of electromigration: From Black's equation to modern TCAD models. Microelectron. Reliab. 50 (6) (2010)