Viktor Sverdlov

Publication Activity (10 Years)

Years Active: 2005-2024
Publications (10 Years): 14

Top Topics

Top Venues

Publications

Bernhard Pruckner, Nils Petter Jørstad, T. Hadámek, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. MIPRO (2024)
Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. DRC (2024)
Mario Bendra, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. MIPRO (2024)
Johannes Ender, Roberto Lacerda de Orio, Wolfgang Gös, Viktor Sverdlov
Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning. LSSC (2023)
Viktor Sverdlov, Siegfried Selberherr
Charge and Spin Transport in Semiconductor Devices. ASICON (2023)
Viktor Sverdlov, Mario Bendra, Bernhard Pruckner, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. ESSDERC (2023)
Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, Nils Petter Jørstad, B. Pruckner, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
Back-Hopping in Ultra-Scaled MRAM Cells. MIPRO (2023)
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
Spin Torques in ULTRA-Scaled MRAM Devices. ESSDERC (2022)
M. Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadamek, W. J. Loch, N. P. Jørstad, Siegfried Selberherr, Wolfgang Gös, Viktor Sverdlov
Spin Transfer Torques in Ultra-Scaled MRAM Cells. MIPRO (2022)
M. Bendra, Johannes Ender, Simone Fiorentini, T. Hadamek, Roberto Lacerda de Orio, Wolfgang Gös, Viktor Sverdlov, Siegfried Selberherr
Finite Element Method Approach to MRAM Modeling. MIPRO (2021)
Viktor Sverdlov, Al-Moatasem Bellah El-Sayed, Siegfried Selberherr
Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study. MIXDES (2020)
Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Gös, Johannes Ender, Simone Fiorentini, Viktor Sverdlov
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. ESSDERC (2019)
Viktor Sverdlov, Siegfried Selberherr
A Monte Carlo Evaluation of the Current and Low Frequency Current Noise at Spin-Dependent Hopping. LSSC (2019)
Thomas Windbacher, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register. ESSDERC (2016)
Viktor Sverdlov, Siegfried Selberherr
Spin-Based CMOS-Compatible Devices. LSSC (2015)
Joydeep Ghosh, Dmitry Osintsev, Viktor Sverdlov, Josef Weinbub, Siegfried Selberherr
Evaluation of Spin Lifetime in Thin-Body FETs: A High Performance Computing Approach. LSSC (2015)
Alexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr
SOT-MRAM based on 1Transistor-1MTJ-cell structure. NVMTS (2015)
Hiwa Mahmoudi, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr
Compact modeling of memristive IMP gates for reliable stateful logic design. MIXDES (2014)
Viktor Sverdlov, Hiwa Mahmoudi, Alexander Makarov, Siegfried Selberherr
Magnetic tunnel junctions for future memory and logic-in-memory applications. MIXDES (2014)
Hiwa Mahmoudi, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr
MRAM-based logic array for large-scale non-volatile logic-in-memory applications. NANOARCH (2013)
Thomas Windbacher, Hiwa Mahmoudi, Viktor Sverdlov, Siegfried Selberherr
Novel MTJ-based shift register for non-volatile logic applications. NANOARCH (2013)
Dmitry Osintsev, Viktor Sverdlov, Siegfried Selberherr
Reduction of momentum and spin relaxation rate in strained thin silicon films. ESSDERC (2013)
Hiwa Mahmoudi, Viktor Sverdlov, Siegfried Selberherr
MTJ-based implication logic gates and circuit architecture for large-scale spintronic stateful logic systems. ESSDERC (2012)
Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
Emerging memory technologies: Trends, challenges, and modeling methods. Microelectron. Reliab. 52 (4) (2012)
Dmitry Osintsev, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. LSSC (2011)
Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. NMA (2010)
Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr, Clemens Heitzinger, Norbert J. Mauser, Christian A. Ringhofer
Study of the Properties of Biotin-streptavidin Sensitive BioFETs. BIODEVICES (2009)
Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectron. Reliab. 49 (9-11) (2009)
Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr
Biotin-Streptavidin Sensitive BioFETs and Their Properties. BIOSTEC (Selected Papers) (2009)
M. Vasicek, Viktor Sverdlov, Johann Cervenka, Tibor Grasser, Hans Kosina, Siegfried Selberherr
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. LSSC (2009)
Viktor Sverdlov, Enzo Ungersboeck, Hans Kosina
Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering. LSSC (2007)
Viktor Sverdlov, Hans Kosina, Siegfried Selberherr
Modeling current transport in ultra-scaled field-effect transistors. Microelectron. Reliab. 47 (1) (2007)
Viktor Sverdlov, Hans Kosina, Christian A. Ringhofer, Mihail Nedjalkov, Siegfried Selberherr
Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator. LSSC (2005)