Alexander Makarov

Publication Activity (10 Years)

Years Active: 2010-2023
Publications (10 Years): 13

Top Topics

Schottky Barrier

Cumulative Distribution Functions

Top Venues

Publications

Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS (2023)
Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. IRPS (2022)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS (2022)
Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS (2022)
Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS (2020)
Nikolay Russkikh, Denis V. Antonets, Dmitry Shtokalo, Alexander Makarov, Yuri Vyatkin, Alexey Zakharov, Evgeny Terentyev
Style transfer with variational autoencoders is a promising approach to RNA-Seq data harmonization and analysis. Bioinform. 36 (20) (2020)
Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Gös, Johannes Ender, Simone Fiorentini, Viktor Sverdlov
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. ESSDERC (2019)
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS (2019)
Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC (2019)
Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS (2019)
Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC (2016)
Thomas Windbacher, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register. ESSDERC (2016)
Alexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr
SOT-MRAM based on 1Transistor-1MTJ-cell structure. NVMTS (2015)
Viktor Sverdlov, Hiwa Mahmoudi, Alexander Makarov, Siegfried Selberherr
Magnetic tunnel junctions for future memory and logic-in-memory applications. MIXDES (2014)
Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
Emerging memory technologies: Trends, challenges, and modeling methods. Microelectron. Reliab. 52 (4) (2012)
Dmitry Osintsev, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. LSSC (2011)
Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. NMA (2010)