Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
Alexander MakarovDimitri LintenStanislav TyaginovBen KaczerPhilippe RousselAdrian ChasinMichiel VandemaeleGeert HellingsAl-Moatasem El-SayedMarkus JechTibor GrasserPublished in: ESSDERC (2019)