Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins.
Dmitry OsintsevAlexander MakarovViktor SverdlovSiegfried SelberherrPublished in: LSSC (2011)
Keyphrases
- field effect transistors
- mathematical analysis
- desirable properties
- high density
- semiconductor devices
- numerical simulations
- database
- data sets
- learning algorithm
- artificial intelligence
- cost effective
- schottky barrier
- high efficiency
- structural properties
- simulation model
- computationally expensive
- steady state
- three dimensional
- real time