Rainer Minixhofer

Publication Activity (10 Years)

Years Active: 2004-2015
Publications (10 Years): 0

Top Topics

Integrated Circuit

Probabilistic Topic Models

Top Venues

Publications

André Lange, Ihor Harasymiv, Oliver Eisenberger, Frederic Roger, Joachim Haase, Rainer Minixhofer
Towards probabilistic analog behavioral modeling. ISCAS (2015)
Marko Magerl, Christian Stockreiter, Oliver Eisenberger, Rainer Minixhofer, Adrijan Baric
Building interchangeable black-box models of integrated circuits for EMC simulations. EMC Compo (2015)
Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser
Interface traps density-of-states as a vital component for hot-carrier degradation modeling. Microelectron. Reliab. 50 (9-11) (2010)
Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors. IET Circuits Devices Syst. 2 (3) (2008)
Martin Schrems, Martin Knaipp, Hubert Enichlmair, Verena Vescoli, Rainer Minixhofer, Ehrenfried Seebacher, Friedrich Peter Leisenberger, E. Wachmann, Gregor Schatzberger, Heimo Gensinger
Scalable High Voltage CMOS technology for Smart Power and sensor applications. Elektrotech. Informationstechnik 125 (4) (2008)
Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures. Microelectron. Reliab. 47 (4-5) (2007)
Hubert Enichlmair, Sara Carniello, Jong Mun Park, Rainer Minixhofer
Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor. Microelectron. Reliab. 47 (9-11) (2007)
Federico Baronti, Paolo D'Abramo, Martin Knaipp, Rainer Minixhofer, Roberto Roncella, Roberto Saletti, Martin Schrems, Riccardo Serventi, Verena Vescoli
FlexRay transceiver in a 0.35 µm CMOS high-voltage technology. DATE Designers' Forum (2006)
Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. Microelectron. J. 35 (10) (2004)