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Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors.
Verena Vescoli
Jong Mun Park
Hubert Enichlmair
Martin Knaipp
Georg Röhrer
Rainer Minixhofer
Martin Schrems
Published in:
IET Circuits Devices Syst. (2008)
Keyphrases
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high voltage
operating conditions
partial discharge
diffusion process
highly reliable
neural network
artificial neural networks
failure rate
normal operation
artificial intelligence
knowledge base
training data
multi class
error rate