Kai-Hsin Chuang

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 7

Top Topics

Design Considerations

Gate Dielectrics

Random Access Memory

Top Venues

IACR Trans. Cryptogr. Hardw. Embed. Syst.

IEEE Internet Things J.

Publications

Chun-Heng You, Chih-Hao Chiang, Paul C.-P. Chao, Wen-Ching Lin, Kai-Hsin Chuang
New Adaptive Template Attacks Against Montgomery-Ladder-Based ECCs in IoT Devices. IEEE Internet Things J. 11 (12) (2024)
Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS (2020)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits 54 (10) (2019)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC (2018)
Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS (2018)
Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. 2018 (1) (2018)
Erik Bury, Adrian Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marco Simicic, Pieter Weckx, Dimitri Linten
Self-heating-aware CMOS reliability characterization using degradation maps. IRPS (2018)