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A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS.

Kai-Hsin ChuangErik BuryRobin DegraeveBen KaczerDimitri LintenIngrid Verbauwhede
Published in: IEEE J. Solid State Circuits (2019)
Keyphrases
  • leakage current
  • low voltage
  • random access memory
  • high speed
  • error rate
  • cmos technology
  • low cost
  • design considerations
  • single chip
  • fuel cell
  • metal oxide