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A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS.
Kai-Hsin Chuang
Erik Bury
Robin Degraeve
Ben Kaczer
Dimitri Linten
Ingrid Verbauwhede
Published in:
IEEE J. Solid State Circuits (2019)
Keyphrases
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leakage current
low voltage
random access memory
high speed
error rate
cmos technology
low cost
design considerations
single chip
fuel cell
metal oxide