Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.

L. Panarella Ben Kaczer Quentin Smets Devin Verreck Tom Schram Daire Cott Dennis Lin Stanislav Tyaginov I. Asselberghs Cesar J. Lockhart de la Rosa Gouri Sankar Kar Valeri Afanas'ev

Published in: IRPS (2023)

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