Login / Signup

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.

J. P. BastosBarry J. O'SullivanJacopo FrancoStanislav TyaginovBrecht TruijenAdrian ChasinRobin DegraeveBen KaczerRomain RitzenthalerE. CapogrecoE. Dentoni LittaAlessio SpessotYusuke HigashiY. YoonV. MachkaoutsanPierre FazanN. Horiguchi
Published in: IRPS (2022)
Keyphrases
  • high voltage
  • operating conditions
  • mobile devices
  • normal operation
  • memory usage
  • partial discharge
  • main memory
  • memory requirements
  • data sets
  • knowledge base
  • feature space
  • multi class
  • control strategy
  • room temperature