Gregor Pobegen

Publication Activity (10 Years)

Years Active: 2011-2024
Publications (10 Years): 5

Top Topics

Room Temperature

Charge Coupled Devices

Temporal Evolution

Chemical Vapor Deposition

Top Venues

Microelectron. Reliab.

Publications

Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS (2024)
Bernhard Ruch, Gregor Pobegen, Christian Schleich, Tibor Grasser
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping. IRPS (2020)
Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS (2020)
Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS (2018)
Thomas Aichinger, Gerald Rescher, Gregor Pobegen
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectron. Reliab. 80 (2018)
Roberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser
On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements. ESSDERC (2015)
Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier
Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. IRPS (2015)
Gregor Pobegen, Andreas Krassnig
Instabilities of SiC MOSFETs during use conditions and following bias temperature stress. IRPS (2015)
Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectron. Reliab. 51 (9-11) (2011)