Dionyz Pogany

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 4

Top Topics

High Temperature

Power Distribution

Silicon Dioxide

Top Venues

Microelectron. Reliab.

Publications

D. Wieland, S. Ofner, M. Stabentheiner, B. Butej, Christian Koller, J. Sun, Andrea Minetto, K. Reiser, Oliver Häberlen, Michael Nelhiebel, Michael Glavanovics, Dionyz Pogany, Clemens Ostermaier
A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. IRPS (2023)
Clemens Ostermaier, Peter Lagger, M. Reiner, Dionyz Pogany
Review of bias-temperature instabilities at the III-N/dielectric interface. Microelectron. Reliab. 82 (2018)
Clément Fleury, Guido Notermans, Hans-Martin Ritter, Dionyz Pogany
TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs. Microelectron. Reliab. (2017)
Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58 (2016)
Peter Lagger, S. Donsa, P. Spreitzer, Gregor Pobegen, M. Reiner, H. Naharashi, J. Mohamed, H. Mosslacher, G. Prechtl, Dionyz Pogany, Clemens Ostermaier
Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. IRPS (2015)
Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC (2015)
Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 55 (9-10) (2015)
Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany
ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. Microelectron. Reliab. 55 (9-10) (2015)
Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53 (9-11) (2013)
J. Rhayem, B. Besbes, Raul Blecic, Sergey Bychikhin, Georg Haberfehlner, Dionyz Pogany, B. Desoete, Renaud Gillon, Aarnout Wieers, Marnix Tack
power devices. Microelectron. J. 43 (9) (2012)
Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectron. Reliab. 52 (9-10) (2012)
Guido Notermans, Sergey Bychikhin, Dionyz Pogany, David Johnsson, Dejan M. Maksimovic
HMM-TLP correlation for system-efficient ESD design. Microelectron. Reliab. 52 (6) (2012)
Paul Marko, Matteo Meneghini, Sergey Bychikhin, Denis Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 52 (9-10) (2012)
Dionyz Pogany, Sergey Bychikhin, Michael Heer, W. Mamanee, Erich Gornik
Application of transient interferometric mapping method for ESD and latch-up analysis. Microelectron. Reliab. 51 (9-11) (2011)
Helmut Köck, Christian Djelassi, Stefano de Filippis, Robert Illing, Michael Nelhiebel, Markus Ladurner, Michael Glavanovics, Dionyz Pogany
Improved thermal management of low voltage power devices with optimized bond wire positions. Microelectron. Reliab. 51 (9-11) (2011)
A. Podgaynaya, Ralf Rudolf, B. Elattari, Dionyz Pogany, Erich Gornik, Matthias Stecher, Marc Strasser
Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization. Microelectron. Reliab. 50 (9-11) (2010)
Sergey Bychikhin, Georg Haberfehlner, J. Rhayem, Daniel Vanderstraeten, Renaud Gillon, Dionyz Pogany
Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation. Microelectron. Reliab. 50 (9-11) (2010)
Georg Haberfehlner, Sergey Bychikhin, Viktor Dubec, Michael Heer, A. Podgaynaya, M. Pfost, Matthias Stecher, Erich Gornik, Dionyz Pogany
Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system. Microelectron. Reliab. 49 (9-11) (2009)
Michael Heer, Krzysztof Domanski, Kai Esmark, Ulrich Glaser, Dionyz Pogany, Erich Gornik, Wolfgang Stadler
Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. Microelectron. Reliab. 49 (12) (2009)
Helmut Köck, Vladimír Kosel, Christian Djelassi, Michael Glavanovics, Dionyz Pogany
IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures. Microelectron. Reliab. 49 (9-11) (2009)
Michael Heer, P. Grombach, A. Heid, Dionyz Pogany
Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications. Microelectron. Reliab. 48 (8-9) (2008)
Michael Heer, Sergey Bychikhin, W. Mamanee, Dionyz Pogany, A. Heid, P. Grombach, M. Klaussner, Winfried Soppa, B. Ramler
Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices. Microelectron. Reliab. 47 (9-11) (2007)
Karol Cico, Ján Kuzmík, Dagmar Gregusová, Roman Stoklas, Tibor Lalinsky, Alexandros G. Georgakilas, Dionyz Pogany, Karol Fröhlich
/GaN metal-oxide-semiconductor structures. Microelectron. Reliab. 47 (4-5) (2007)
Viktor Dubec, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Tilo Brodbeck, Wolfgang Stadler
Backside interferometric methods for localization of ESD-induced leakage current and metal shorts. Microelectron. Reliab. 47 (9-11) (2007)
Sergey Bychikhin, T. Swietlik, Tadeusz Suski, S. Porowski, Piotr Perlin, Dionyz Pogany
Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping. Microelectron. Reliab. 47 (9-11) (2007)
Michael Heer, Viktor Dubec, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, M. Frank, A. Konrad, J. Schulz
Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. Microelectron. Reliab. 46 (9-11) (2006)
Michael Heer, Viktor Dubec, M. Blaho, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Marie Denison, Matthias Stecher, Gerhard Groos
Automated setup for thermal imaging and electrical degradation study of power DMOS devices. Microelectron. Reliab. 45 (9-11) (2005)
Martin Litzenberger, Christoph Furböck, Sergey Bychikhin, Dionyz Pogany, Erich Gornik
Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices. IEEE Trans. Instrum. Meas. 54 (6) (2005)
Sergey Bychikhin, Viktor Dubec, Dionyz Pogany, Erich Gornik, M. Graf, V. Dudek, Winfried Soppa
Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress. Microelectron. Reliab. 44 (9-11) (2004)
Viktor Dubec, Sergey Bychikhin, M. Blaho, Michael Heer, Dionyz Pogany, Marie Denison, Nils Jensen, Matthias Stecher, Gerhard Groos, Erich Gornik
Multiple-time-instant 2D thermal mapping during a single ESD event. Microelectron. Reliab. 44 (9-11) (2004)
M. Blaho, Dionyz Pogany, Erich Gornik, Marie Denison, Gerhard Groos, Matthias Stecher
Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. Microelectron. Reliab. 43 (4) (2003)
Viktor Dubec, Sergey Bychikhin, M. Blaho, Dionyz Pogany, Erich Gornik, J. Willemen, Ning Qu, Wolfgang Wilkening, L. Zullino, A. Andreini
A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress. Microelectron. Reliab. 43 (9-11) (2003)
Wolfgang Stadler, Kai Esmark, Harald Gossner, Martin Streibl, M. Wendel, Wolfgang Fichtner, Dionyz Pogany, Martin Litzenberger, Erich Gornik
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. Microelectron. Reliab. 42 (9-11) (2002)
Dionyz Pogany, Ján Kuzmík, J. Darmo, Martin Litzenberger, Sergey Bychikhin, Karl Unterrainer, Z. Mozolova, S. Hascik, Tibor Lalinsky, Erich Gornik
Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. Microelectron. Reliab. 42 (9-11) (2002)
M. Blaho, Dionyz Pogany, L. Zullino, A. Andreini, Erich Gornik
Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions. Microelectron. Reliab. 42 (9-11) (2002)
Martin Litzenberger, R. Pichler, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Kai Esmark, Harald Gossner
Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. Microelectron. Reliab. 41 (9-10) (2001)
Sergey Bychikhin, Martin Litzenberger, R. Pichler, Dionyz Pogany, Erich Gornik, Gerhard Groos, Matthias Stecher
Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures. Microelectron. Reliab. 41 (9-10) (2001)