Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.

Clemens Ostermaier Peter Lagger Mohammed Alomari Patrick Herfurth David Maier Alexander Alexewicz Marie-Antoinette di Forte-Poisson Sylvain L. Delage Gottfried Strasser Dionyz Pogany Erhard Kohn

Published in: Microelectron. Reliab. (2012)

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