Sylvain L. Delage

Publication Activity (10 Years)

Years Active: 2001-2018
Publications (10 Years): 1

Top Topics

Reliability Assessment

Short Term And Long Term

Leakage Current

Top Venues

Microelectron. Reliab.

Publications

Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, C. Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. Microelectron. Reliab. (2018)
Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. ESSDERC (2014)
Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, M. Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectron. Reliab. 54 (9-10) (2014)
Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate. Microelectron. Reliab. 53 (9-11) (2013)
Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectron. Reliab. 52 (9-10) (2012)
Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage
Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors. Microelectron. Reliab. 52 (7) (2012)
A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, Sylvain L. Delage
A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications. Microelectron. Reliab. 45 (9-11) (2005)
A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl
Reliability Investigation of Gallium Nitride HEMT. Microelectron. Reliab. 44 (9-11) (2004)
Sylvain L. Delage, Christian Dua
Wide band gap semiconductor reliability : Status and trends. Microelectron. Reliab. 43 (9-11) (2003)
Cezary Sydlo, Bastian Mottet, Husin Ganis, Hans L. Hartnagel, Viktor Krozer, Sylvain L. Delage, Simone Cassette, Eric Chartier, D. Floriot, Steven Bland
Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT. Microelectron. Reliab. 41 (9-10) (2001)
Sylvain L. Delage
Heterojunction bipolar transistors for millimeter waves applications: trends and achievements. Ann. des Télécommunications 56 (1-2) (2001)