Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.
Isabella RossettoFabiana RampazzoRiccardo SilvestriAlberto ZanandreaChristian DuaSylvain L. DelageMourad OualliMatteo MeneghiniEnrico ZanoniGaudenzio MeneghessoPublished in: Microelectron. Reliab. (2013)