Joachim Würfl

Publication Activity (10 Years)

Years Active: 2001-2022
Publications (10 Years): 8

Top Topics

Dynamic Constraints

High Temperature

Top Venues

Microelectron. Reliab.

Publications

Yi-Fan Tsao, Heng-Shou Hsu, Joachim Würfl, Heng-Tung Hsu
Dual-Band Power Amplifier Design at 28/38 GHz for 5G New Radio Applications. IEEE Access 10 (2022)
Oliver Hilt, Frank Brunner, Eldad Bahat Treidel, Mihaela Wolf, Joachim Würfl
GaN-channel HEMTs with AlN buffer for high-voltage switching. DRC (2021)
Eldad Bahat Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. DRC (2020)
Nidhi Chaturvedi, Richard Lossy, Kuldip Singh, Dheeraj K. Kharbanda, Shivanshu Mishra, Ashok Chauhan, Kaushal Kishore, Pramod K. Khanna, Joachim Würfl
Design and Development of Gallium Nitride HEMTs Based Liquid Sensor. IEEE SENSORS (2018)
Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. Microelectron. Reliab. 64 (2016)
Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58 (2016)
Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC (2015)
Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 55 (9-10) (2015)
Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectron. Reliab. 54 (9-10) (2014)
Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. Microelectron. Reliab. 54 (6-7) (2014)
Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53 (9-11) (2013)
Richard Lossy, Hervé Blanck, Joachim Würfl
Reliability studies on GaN HEMTs with sputtered Iridium gate module. Microelectron. Reliab. 52 (9-10) (2012)
Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52 (9-10) (2012)
Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. Microelectron. Reliab. 51 (2) (2011)
Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51 (9-11) (2011)
Reza Pazirandeh, Joachim Würfl, Günther Tränkle
. Microelectron. Reliab. 50 (6) (2010)
Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. Microelectron. Reliab. 49 (9-11) (2009)
A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl
Reliability Investigation of Gallium Nitride HEMT. Microelectron. Reliab. 44 (9-11) (2004)
Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers
Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. Microelectron. Reliab. 43 (6) (2003)
Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph, Markus Weyers
Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing. Microelectron. Reliab. 41 (8) (2001)