Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure.

Matteo Meneghini Oliver Hilt Clément Fleury Riccardo Silvestri Mattia Capriotti Gottfried Strasser Dionyz Pogany Eldad Bahat-Treidel Frank Brunner A. Knauer Joachim Würfl Isabella Rossetto Enrico Zanoni Gaudenzio Meneghesso Stefano Dalcanale

Published in: Microelectron. Reliab. (2016)

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