Oliver Hilt

Publication Activity (10 Years)

Years Active: 2011-2021
Publications (10 Years): 6

Top Topics

Silicon Dioxide

High Temperature

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Oliver Hilt, Frank Brunner, Eldad Bahat Treidel, Mihaela Wolf, Joachim Würfl
GaN-channel HEMTs with AlN buffer for high-voltage switching. DRC (2021)
Eldad Bahat Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. DRC (2020)
Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. Microelectron. Reliab. 64 (2016)
Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58 (2016)
Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC (2015)
Clément Fleury, Mattia Capriotti, Matteo Rigato, Oliver Hilt, Joachim Würfl, Joff Derluyn, Stephan Steinhauer, Anton Köck, Gottfried Strasser, Dionyz Pogany
High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 55 (9-10) (2015)
Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Capriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. Microelectron. Reliab. 53 (9-11) (2013)
Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52 (9-10) (2012)
Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51 (9-11) (2011)