Richard Lossy

Publication Activity (10 Years)

Years Active: 2004-2018
Publications (10 Years): 1

Top Topics

Top Venues

Microelectron. Reliab.

Publications

Nidhi Chaturvedi, Richard Lossy, Kuldip Singh, Dheeraj K. Kharbanda, Shivanshu Mishra, Ashok Chauhan, Kaushal Kishore, Pramod K. Khanna, Joachim Würfl
Design and Development of Gallium Nitride HEMTs Based Liquid Sensor. IEEE SENSORS (2018)
Ponky Ivo, Eunjung Melanie Cho, Przemyslaw Kotara, Lars Schellhase, Richard Lossy, Ute Zeimer, Anna Mogilatenko, Joachim Würfl, Günther Tränkle, Arkadiusz Glowacki, Christian Boit
New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery. Microelectron. Reliab. 54 (6-7) (2014)
Richard Lossy, Hervé Blanck, Joachim Würfl
Reliability studies on GaN HEMTs with sputtered Iridium gate module. Microelectron. Reliab. 52 (9-10) (2012)
Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. Microelectron. Reliab. 51 (2) (2011)
Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51 (9-11) (2011)
Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. Microelectron. Reliab. 49 (9-11) (2009)
A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl
Reliability Investigation of Gallium Nitride HEMT. Microelectron. Reliab. 44 (9-11) (2004)