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New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery.

Ponky IvoEunjung Melanie ChoPrzemyslaw KotaraLars SchellhaseRichard LossyUte ZeimerAnna MogilatenkoJoachim WürflGünther TränkleArkadiusz GlowackiChristian Boit
Published in: Microelectron. Reliab. (2014)
Keyphrases
  • image structure
  • scale space
  • image regions
  • spatial extent
  • computational model
  • keypoints
  • small scale
  • segmented images
  • mechanism design
  • invariant descriptors
  • metal oxide semiconductor