Eldad Bahat-Treidel

Publication Activity (10 Years)

Years Active: 2009-2023
Publications (10 Years): 4

Top Topics

Field Effect Transistors

Top Venues

Microelectron. Reliab.

Publications

Manuel Fregolent, Alberto Marcuzzi, Carlo De Santi, Eldad Bahat-Treidel, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. IRPS (2023)
Eldad Bahat-Treidel, Oliver Hilt, O. Bahat Treidel, Joachim Würfl
Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs. Microelectron. Reliab. 64 (2016)
Matteo Meneghini, Oliver Hilt, Clément Fleury, Riccardo Silvestri, Mattia Capriotti, Gottfried Strasser, Dionyz Pogany, Eldad Bahat-Treidel, Frank Brunner, A. Knauer, Joachim Würfl, Isabella Rossetto, Enrico Zanoni, Gaudenzio Meneghesso, Stefano Dalcanale
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. Microelectron. Reliab. 58 (2016)
Mattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl
E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. ESSDERC (2015)
Sergey A. Chevtchenko, Matthias Schulz, Eldad Bahat-Treidel, Wilfred John, Stephan Freyer, Paul Kurpas, Joachim Würfl
Effect of gate trench fabrication technology on reliability of AlGaN/GaN heterojunction field effect transistors. Microelectron. Reliab. 54 (9-10) (2014)
Alberto Zanandrea, Eldad Bahat-Treidel, Fabiana Rampazzo, Antonio Stocco, Matteo Meneghini, Enrico Zanoni, Oliver Hilt, Ponky Ivo, Joachim Würfl, Gaudenzio Meneghesso
Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectron. Reliab. 52 (9-10) (2012)
Ponky Ivo, Arkadiusz Glowacki, Eldad Bahat-Treidel, Richard Lossy, Joachim Würfl, Christian Boit, Günther Tränkle
Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. Microelectron. Reliab. 51 (2) (2011)
Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, E. Cho, Oliver Hilt, Ponky Ivo, A. Knauer, Paul Kurpas, Richard Lossy, Matthias Schulz, S. Singwald, Markus Weyers, Rimma Zhytnytska
Reliability issues of GaN based high voltage power devices. Microelectron. Reliab. 51 (9-11) (2011)
Arkadiusz Glowacki, Piotr Laskowski, Christian Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle
Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures. Microelectron. Reliab. 49 (9-11) (2009)