Single- and double-heterostructure GaN-HEMTs devices for power switching applications.
Alberto ZanandreaEldad Bahat-TreidelFabiana RampazzoAntonio StoccoMatteo MeneghiniEnrico ZanoniOliver HiltPonky IvoJoachim WürflGaudenzio MeneghessoPublished in: Microelectron. Reliab. (2012)