High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Clément FleuryMattia CapriottiMatteo RigatoOliver HiltJoachim WürflJoff DerluynStephan SteinhauerAnton KöckGottfried StrasserDionyz PoganyPublished in: Microelectron. Reliab. (2015)