Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications.
Clément FleuryRimma ZhytnytskaSergey BychikhinMattia CapriottiOliver HiltDomenica VisalliGaudenzio MeneghessoEnrico ZanoniJoachim WürflJoff DerluynGottfried StrasserDionyz PoganyPublished in: Microelectron. Reliab. (2013)