Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.
Isabella RossettoFabiana RampazzoMatteo MeneghiniM. SilvestriChristian DuaPiero GamarraRaphael AubryMarie-Antoinette di Forte-PoissonO. PatardSylvain L. DelageGaudenzio MeneghessoEnrico ZanoniPublished in: Microelectron. Reliab. (2014)