Mohammed Alomari

Publication Activity (10 Years)

Years Active: 2012-2022
Publications (10 Years): 4

Top Topics

Prediction Model

Structuring Elements

Top Venues

Publications

Mamta Pradhan, Matthias Moser, Mohammed Alomari, Joachim N. Burghartz, Ingmar Kallfass
Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure. ESSDERC (2022)
Lars Heuken, Muhammad Alshahed, Alessandro Ottaviani, Mohammed Alomari, Joachim N. Burghartz, Ulrike Waizmann, Thomas Reindl
Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates. ESSDERC (2018)
Muhammad Alshahed, M. Dakran, Lars Heuken, Mohammed Alomari, Joachim N. Burghartz
Comprehensive compact electro-thermal GaN HEMT model. ESSDERC (2017)
Muhammad Alshahed, Mohammed Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen
600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. ESSDERC (2016)
Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectron. Reliab. 52 (9-10) (2012)