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Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors.

Jaroslav KovácAlexander SatkaAles ChválaD. DonovalPeter KordosSylvain L. Delage
Published in: Microelectron. Reliab. (2012)
Keyphrases
  • schottky barrier
  • field effect transistors
  • leakage current
  • steady state
  • high density
  • mathematical analysis
  • silicon dioxide
  • real time
  • signal processing
  • multi view
  • semiconductor devices