Martin Streibl

Publication Activity (10 Years)

Years Active: 2002-2007
Publications (10 Years): 0

Publications

Ulrich Glaser, Kai Esmark, Martin Streibl, Christian Russ, Krzysztof Domanski, Mauro Ciappa, Wolfgang Fichtner
SCR operation mode of diode strings for ESD protection. Microelectron. Reliab. 47 (7) (2007)
Wolfgang Soldner, Moon-Jung Kim, Martin Streibl, Harald Gossner, Thomas H. Lee, Doris Schmitt-Landsiedel
A 10GHz Broadband Amplifier with Bootstrapped 2kV ESD Protection. ISSCC (2007)
Zheng Gu, Peter Gregorius, Daniel Kehrer, Lydia Neumann, Evelyn Neuscheler, Thomas Rickes, Hermann Ruckerbauer, Ralf Schledz, Martin Streibl, Jürgen Zielbauer
Cascading Techniques for a High-Speed Memory Interface. ISSCC (2007)
Wolfgang Soldner, Martin Streibl, U. Hodel, Marc Tiebout, Harald Gossner, Doris Schmitt-Landsiedel, Jung-Hoon Chun, Choshu Ito, Robert W. Dutton
RF ESD protection strategies: Codesign vs. low-C protection. Microelectron. Reliab. 47 (7) (2007)
Raffaele Salerno, Marc Tiebout, Hermann Paule, Martin Streibl, Christoph Sandner, Klaus Kropf
ESD-protected CMOS 3-5 GHz wideband LNA+PGA design for UWB. ESSCIRC (2005)
S. Bargstädt-Franke, Wolfgang Stadler, Kai Esmark, Martin Streibl, Krzysztof Domanski, Horst A. Gieser, Heinrich Wolf, Waclaw Bala
Transient latch-up: experimental analysis and device simulation. Microelectron. Reliab. 45 (2) (2005)
Martin Streibl, F. Zängl, Kai Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel
High abstraction level permutational ESD concept analysis. Microelectron. Reliab. 45 (2) (2005)
Martin Streibl, Kai Esmark, A. Sieck, Wolfgang Stadler, M. Wendel, J. Szatkowski, Harald Gossner
Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. Microelectron. Reliab. 43 (7) (2003)
Wolfgang Stadler, Kai Esmark, Harald Gossner, Martin Streibl, M. Wendel, Wolfgang Fichtner, Dionyz Pogany, Martin Litzenberger, Erich Gornik
Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. Microelectron. Reliab. 42 (9-11) (2002)