Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs.
Thomas AichingerMatthias SchmidtPublished in: IRPS (2020)
Keyphrases
- failure rate
- leakage current
- low voltage
- random variables
- silicon dioxide
- occurrence probability
- industrial applications
- field effect transistors
- design considerations
- fuel cell
- data sets
- room temperature
- cmos technology
- electrical properties
- production rate
- power management
- electron microscopy
- probabilistic model
- computational complexity