Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.
Gunnar Andreas RottKarina RottHans ReisingerWolfgang GustinTibor GrasserPublished in: Microelectron. Reliab. (2014)
Keyphrases
- nm technology
- field effect transistors
- power consumption
- low power
- electric field
- room temperature
- steady state
- high density
- space charge
- positive and negative
- electrical power
- power system
- low voltage
- cmos technology
- mixture model
- multi channel
- low cost
- false alarm probability
- duty cycle
- mathematical analysis
- transmission line
- operating conditions
- multiple input
- hidden markov models
- expectation maximization
- probabilistic model