Andreas Martin

Publication Activity (10 Years)

Years Active: 2001-2022
Publications (10 Years): 6

Top Topics

Main Memory Databases

Damage Detection

Monitoring System

Top Venues

Microelectron. Reliab.

Publications

Andreas Martin
Plasma processing induced charging damage (PID) assessment with appropriate fWLR stress methods ensuring expected MOS reliability and lifetimes for automotive products (Invited). IRPS (2022)
Andreas Martin, Angelika Kamp
A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs. IRPS (2020)
D. Beckmeier, Andreas Martin
Variation-resilient quantifiable plasma process induced damage monitoring. Microelectron. Reliab. (2018)
D. Beckmeier, Andreas Martin
Plasma process induced damage detection by fast wafer level reliability monitoring for automotive applications. Microelectron. Reliab. 64 (2016)
Andreas Martin, Rolf-Peter Vollertsen, A. Mitchell, M. Traving, D. Beckmeier, H. Nielen
Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process. Microelectron. Reliab. 64 (2016)
Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger
Degradation and recovery of variability due to BTI. Microelectron. Reliab. 64 (2016)
Andreas Martin
Reliability of gate dielectrics and metal-insulator-metal capacitors. Microelectron. Reliab. 45 (5-6) (2005)
Andreas Martin, Rolf-Peter Vollertsen
An introduction to fast wafer level reliability monitoring for integrated circuit mass production. Microelectron. Reliab. 44 (8) (2004)
Andreas Martin, Jochen von Hagen, Glenn B. Alers
Ramped current stress for fast and reliable wafer level reliability monitoring of thin gate oxide reliability. Microelectron. Reliab. 43 (8) (2003)
Andreas Martin
Editorial. Microelectron. Reliab. 41 (7) (2001)
Gunnar Diestel, Andreas Martin, Martin Kerber, Alfred Schlemm, Horst Erlenmaier, Bernhard Murr, Andreas Preussger
Quality assessment of thin oxides using constant and ramped stress measurements. Microelectron. Reliab. 41 (7) (2001)