Alexander L. Shluger

Publication Activity (10 Years)

Years Active: 2010-2023
Publications (10 Years): 8

Top Topics

Computationally Demanding

Mathematical Analysis

Semiconductor Devices

Top Venues

J. Comput. Chem.

Publications

Andrea Padovani, Paolo La Torraca, Jack Strand, Alexander L. Shluger, Valerio Milo, Luca Larcher
Towards a Universal Model of Dielectric Breakdown. IRPS (2023)
James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS (2022)
Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. IMW (2022)
Anthony J. Kenyon, Adnan Mehonic, Wing H. Ng, Longfei Zhao, Horatio Cox, Mark Buckwell, Kamal Patel, Andrew P. Knights, Daniel J. Mannion, Alexander L. Shluger
Defining the performance of SiOx ReRAM by engineering oxide microstructure. MOCAST (2022)
James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
Mitigating switching variability in carbon nanotube memristors. IRPS (2021)
Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger
Variability sources and reliability of 3D - FeFETs. IRPS (2021)
David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. IRPS (2018)
Wolfgang Gös, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. 87 (2018)
David Z. Gao, Filippo Federici Canova, Matthew B. Watkins, Alexander L. Shluger
Efficient parametrization of complex molecule-surface force fields. J. Comput. Chem. 36 (16) (2015)
Tibor Grasser, M. Wahl, Wolfgang Gös, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS (2015)
Maria L. Sushko, Peter V. Sushko, Igor V. Abarenkov, Alexander L. Shluger
QM/MM method for metal-organic interfaces. J. Comput. Chem. 31 (16) (2010)