Dmitry Veksler

Publication Activity (10 Years)

Years Active: 2015-2023
Publications (10 Years): 6

Top Topics

Density Distribution

Finding Relevant

Memory Requirements

Top Venues

Publications

Gennadi Bersuker, E. Tang, Dmitry Veksler
Signal duration sensitive degradation in scaled devices. IRPS (2023)
James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS (2022)
S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay K. Banerjee
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices. DRC (2022)
James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
Mitigating switching variability in carbon nanotube memristors. IRPS (2021)
Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, K. P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer
) under circuitry-relevant operation conditions. IRPS (2020)
Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, K. P. Cheung, Jason P. Campbell
Switching Variability Factors in Compliance-Free Metal Oxide RRAM. IRPS (2019)
G. Sereni, Luca Vandelli, Roberto Cavicchioli, Luca Larcher, Dmitry Veksler, Gennadi Bersuker
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs. IRPS (2015)