Gennadi Bersuker

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 6

Top Topics

Mathematical Analysis

Density Distribution

Finding Relevant

Top Venues

IEEE Trans. Reliab.

Publications

Gennadi Bersuker, E. Tang, Dmitry Veksler
Signal duration sensitive degradation in scaled devices. IRPS (2023)
James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS (2022)
S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay K. Banerjee
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices. DRC (2022)
James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen
Mitigating switching variability in carbon nanotube memristors. IRPS (2021)
Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, Maribeth Mason, P. R. Shrestha, K. P. Cheung, Jason P. Campbell, Thomas Rueckes, Lee Cleveland, Harry Luan, David C. Gilmer
) under circuitry-relevant operation conditions. IRPS (2020)
Dmitry Veksler, Gennadi Bersuker, Adam W. Bushmaker, P. R. Shrestha, K. P. Cheung, Jason P. Campbell
Switching Variability Factors in Compliance-Free Metal Oxide RRAM. IRPS (2019)
Mohamed T. Ghoneim, Jhonathan P. Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad Mustafa Hussain
Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon. IEEE Trans. Reliab. 64 (2) (2015)
Violaine Iglesias, Marc Porti, Carlos Couso, Q. Wu, S. Claramunt, Montserrat Nafría, Enrique Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes
Threading dislocations in III-V semiconductors: Analysis of electrical conduction. IRPS (2015)
G. Sereni, Luca Vandelli, Roberto Cavicchioli, Luca Larcher, Dmitry Veksler, Gennadi Bersuker
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs. IRPS (2015)
Gennadi Bersuker
Assessing device reliability through atomic-level modeling of material characteristics. ICICDT (2014)
Gennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher, Andrea Padovani
Connecting RRAM performance to the properties of the hafnia-based dielectrics. ESSDERC (2013)
Gennadi Bersuker
Microscopic degradation models for advanced technology. VLSI-DAT (2013)
Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen
/Pt structures. Microelectron. Reliab. 52 (9-10) (2012)
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. ESSDERC (2012)
Chang Yong Kang, K. W. Ang, R. Hill, W. Y. Loh, Jungwoo Oh, Rinus Lee, David Gilmer, Gennadi Bersuker, C. Hobbs, Paul Kirsch, Klaus Hummler, S. Arkalgud, Raj Jammy
Emerging CMOS and beyond CMOS technologies for an ultra-low power 3D world. ICICDT (2012)
N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra
n-channel MOS devices in inversion. Microelectron. Reliab. 49 (5) (2009)
R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectron. Reliab. 48 (11-12) (2008)
Arnost Neugroschel, Gennadi Bersuker, Rino Choi
Applications of DCIV method to NBTI characterization. Microelectron. Reliab. 47 (9-11) (2007)
Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker
Electrical characterization and analysis techniques for the high-kappa era. Microelectron. Reliab. 47 (4-5) (2007)
Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker
Intrinsic bonding defects in transition metal elemental oxides. Microelectron. Reliab. 46 (9-11) (2006)
Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff
gate stacks with time dependent measurements. Microelectron. Reliab. 45 (5-6) (2005)
Gennadi Bersuker, Jang H. Sim, Chadwin D. Young, Rino Choi, Peter Zeitzoff, George A. Brown, Byoung Hun Lee, Robert W. Murto
Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics. Microelectron. Reliab. 44 (9-11) (2004)
Gennadi Bersuker, Yongjoo Jeon, Howard R. Huff
Degradation of thin oxides during electrical stress. Microelectron. Reliab. 41 (12) (2001)