Francesco Maria Puglisi

Publication Activity (10 Years)

Years Active: 2012-2024
Publications (10 Years): 26

Top Topics

Reliability Analysis

Top Venues

IEEE J. Emerg. Sel. Topics Circuits Syst.

Publications

Davide Florini, Daniela Gandolfi, Jonathan Mapelli, Lorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi
A Hybrid CMOS-Memristor Spiking Neural Network Supporting Multiple Learning Rules. IEEE Trans. Neural Networks Learn. Syst. 35 (4) (2024)
Nicolò Zagni, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam
-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges. Proc. IEEE 111 (2) (2023)
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs. IRPS (2023)
Lorenzo Benatti, Sara Vecchi, Milan Pesic, Francesco Maria Puglisi
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging. IRPS (2023)
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide. ESSDERC (2022)
Raffaele De Rose, Tommaso Zanotti, Francesco Maria Puglisi, Felice Crupi, Paolo Pavan, Marco Lanuzza
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing. CoRR (2022)
Laura Bégon-Lours, Mattia Halter, Marilyne Sousa, Youri Popoff, Diana Dávila Pineda, Donato Francesco Falcone, Zhenming Yu, Steffen Reidt, Lorenzo Benatti, Francesco Maria Puglisi, Bert Jan Offrein
, ferroelectric synaptic weights. Neuromorph. Comput. Eng. 2 (2) (2022)
Sara Vecchi, Paolo Pavan, Francesco Maria Puglisi
The Relevance of Trapped Charge for Leakage and Random Telegraph Noise Phenomena. IRPS (2022)
Lorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions. IRPS (2022)
Tommaso Zanotti, Paolo Pavan, Francesco Maria Puglisi
Self-consistent Automated Parameter Extraction of RRAM Physics-Based Compact Model. ESSDERC (2022)
Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan
Optimized Synthesis Method for Ultra-Low Power Multi-Input Material Implication Logic With Emerging Non-Volatile Memories. IEEE Trans. Circuits Syst. I Regul. Pap. 68 (11) (2021)
Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories. IRPS (2021)
Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan
Smart Logic-in-Memory Architecture For Ultra-Low Power Large Fan-In Operations. AICAS (2020)
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRPS (2020)
Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan
Reconfigurable Smart In-Memory Computing Platform Supporting Logic and Binarized Neural Networks for Low-Power Edge Devices. IEEE J. Emerg. Sel. Topics Circuits Syst. 10 (4) (2020)
Tommaso Zanotti, Francesco Maria Puglisi, Paolo Pavan
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise. IRPS (2020)
Francesco Maria Puglisi, Tommaso Zanotti, Paolo Pavan
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model. ESSDERC (2019)
Francesco Maria Puglisi, Lorenzo Pacchioni, Nicolo Zagni, Paolo Pavan
Energy-Efficient Logic-in-Memory I-bit Full Adder Enabled by a Physics-Based RRAM Compact Model. ESSDERC (2018)
Francesco Maria Puglisi, Nicolo Zagni, Luca Larcher, Paolo Pavan
A new verilog-A compact model of random telegraph noise in oxide-based RRAM for advanced circuit design. ESSDERC (2017)
Francesco Maria Puglisi
Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memories. NVMTS (2017)
Nicolo Zagni, Francesco Maria Puglisi, Giovanni Verzellesi, Paolo Pavan
Variability and sensitivity to process parameters variations in InGaAs dual-gate ultra-thin body MOSFETs: A scaling perspective. PATMOS (2017)
Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS (2016)
Francesco Maria Puglisi, Paolo Pavan
Guidelines for a Reliable Analysis of Random Telegraph Noise in Electronic Devices. IEEE Trans. Instrum. Meas. 65 (6) (2016)
Francesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. ESSDERC (2016)
Luca Larcher, Francesco Maria Puglisi, Andrea Padovani, Luca Vandelli, Paolo Pavan
Multiscale modeling of electron-ion interactions for engineering novel electronic devices and materials. PATMOS (2016)
Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan
: Physics, Compact Modeling, and Variability Control. IEEE J. Emerg. Sel. Topics Circuits Syst. 6 (2) (2016)
Francesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan
Characterization of anomalous Random Telegraph Noise in Resistive Random Access Memory. ESSDERC (2015)
Francesco Maria Puglisi, Paolo Pavan, Luca Vandelli, Andrea Padovani, Matteo Bertocchi, Luca Larcher
A microscopic physical description of RTN current fluctuations in HfOx RRAM. IRPS (2015)
Francesco Maria Puglisi, Paolo Pavan, Luca Larcher, Andrea Padovani
Analysis of RTN and cycling variability in HfO2 RRAM devices in LRS. ESSDERC (2014)
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher
A compact model of hafnium-oxide-based resistive random access memory. ICICDT (2013)
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher
Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. ESSDERC (2013)
Francesco Maria Puglisi, Paolo Pavan, Andrea Padovani, Luca Larcher, Gennadi Bersuker
Random Telegraph Signal noise properties of HfOx RRAM in high resistive state. ESSDERC (2012)