Alessandro Chini

Publication Activity (10 Years)

Years Active: 2005-2023
Publications (10 Years): 9

Top Topics

Structuring Elements

Highly Reliable

Preliminary Investigation

Top Venues

Microelectron. Reliab.

Publications

Marcello Cioni, G. Giorgino, Alessandro Chini, Carmine Miccoli, Maria Eloisa Castagna, M. Moschetti, C. Tringali, Ferdinando Iucolano
Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs. IRPS (2023)
Marcello Cioni, Nicolò Zagni, Alessandro Chini
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications. IRPS (2022)
Marcello Cioni, Nicolò Zagni, Alessandro Chini
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps. ESSDERC (2022)
Marcello Cioni, Patrick Fiorenza, Fabrizio Roccaforte, Mario Saggio, S. Cascino, A. Messina, Vincenzo Vinciguerra, Michele Calabretta, Alessandro Chini
Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs. IRPS (2022)
Marcello Cioni, Alessandro Bertacchini, Alessandro Mucci, Giovanni Verzellesi, Paolo Pavan, Alessandro Chini
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs. IRPS (2021)
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Giovanni Verzellesi
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. IRPS (2020)
Ferdinando Iucolano, Antonino Maurizio Parisi, Santo Reina, Alessandro Chini
A novel GaN HEMT degradation mechanism observed during HTST test. IRPS (2018)
Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, M. Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, D. Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. (2018)
Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
Alessandro Chini, Gaudenzio Meneghesso, Alessio Pantellini, Claudio Lanzieri, Enrico Zanoni
Reliability Investigation of GaN HEMTs for MMICs Applications. Micromachines 5 (3) (2014)
Alessandro Chini, Fabio Soci, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
Traps localization and analysis in GaN HEMTs. Microelectron. Reliab. 54 (9-10) (2014)
Alessandro Chini, Fabio Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, Gaudenzio Meneghesso, Enrico Zanoni
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. Microelectron. Reliab. 53 (9-11) (2013)
Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni
Field plate related reliability improvements in GaN-on-Si HEMTs. Microelectron. Reliab. 52 (9-10) (2012)
Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso, Enrico Zanoni, Fausto Fantini, Alessandro Chini
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress. Microelectron. Reliab. 50 (9-11) (2010)
Giovanni Verzellesi, Gaudenzio Meneghesso, Alessandro Chini, Enrico Zanoni, Claudio Canali
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. Microelectron. Reliab. 45 (9-11) (2005)