Davide Bisi

Publication Activity (10 Years)

Years Active: 2012-2024
Publications (10 Years): 6

Top Topics

Mathematical Morphology

Silicon Dioxide

Chemical Vapor Deposition

Top Venues

Microelectron. Reliab.

Publications

Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS (2024)
Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura
Short-Circuit Capability with GaN HEMTs : Invited. IRPS (2022)
Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58 (2016)
Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS (2015)
Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC (2014)
Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54 (9-10) (2014)
Davide Bisi, Antonio Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni
Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. ESSDERC (2014)
Davide Bisi, Matteo Meneghini, Antonio Stocco, Giulia Cibin, Alessio Pantellini, Antonio Nanni, Claudio Lanzieri, Enrico Zanoni, Gaudenzio Meneghesso
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. ESSDERC (2013)
Alessandro Chini, Fabio Soci, Fausto Fantini, Antonio Nanni, Alessio Pantellini, Claudio Lanzieri, Davide Bisi, Gaudenzio Meneghesso, Enrico Zanoni
Field plate related reliability improvements in GaN-on-Si HEMTs. Microelectron. Reliab. 52 (9-10) (2012)