Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors.
Davide BisiMatteo MeneghiniAntonio StoccoGiulia CibinAlessio PantelliniAntonio NanniClaudio LanzieriEnrico ZanoniGaudenzio MeneghessoPublished in: ESSDERC (2013)