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Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.

Gaudenzio MeneghessoMatteo MeneghiniDavide BisiIsabella RossettoTian-Li WuMarleen Van HoveDenis MarconSteve StoffelsStefaan DecoutereEnrico Zanoni
Published in: Microelectron. Reliab. (2016)
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