Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.
Gaudenzio MeneghessoMatteo MeneghiniDavide BisiIsabella RossettoTian-Li WuMarleen Van HoveDenis MarconSteve StoffelsStefaan DecoutereEnrico ZanoniPublished in: Microelectron. Reliab. (2016)