Stefaan Decoutere

Publication Activity (10 Years)

Years Active: 2001-2024
Publications (10 Years): 18

Top Topics

Gate Dielectrics

Mathematical Analysis

Schottky Barrier

Top Venues

Microelectron. Reliab.

IEICE Electron. Express

Publications

M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS (2024)
Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS (2023)
D. Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS (2022)
Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot
Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. ESSDERC (2022)
M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS (2022)
Andrea Bettini, Thibault Cosnier, Alessandro Magnani, Olga Syshchyk, Matteo Borga, Stefaan Decoutere, Andrea Neviani
Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology. PRIME (2022)
Junichiro Nagao, Urmimala Chatterjee, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi
An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply. IEICE Electron. Express 18 (6) (2021)
Eliana Acurio, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere
ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. IRPS (2021)
Elena Fabris, Matteo Borga, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. IRPS (2021)
Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS (2020)
Yuki Yamashita, Steve Stoffels, Niels Posthuma, Karen Geens, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. IEICE Electron. Express 16 (22) (2019)
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS (2019)
Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken, Zhanfei Chen, Jun Liu, Yuki Yamashita, Kazutoshi Kobayashi
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. ESSDERC (2019)
Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. (2018)
Ales Chvála, Juraj Marek, Patrik Pribytny, Alexander Satka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. Microelectron. Reliab. 78 (2017)
Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. (2017)
Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58 (2016)
Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64 (2016)
Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS (2015)
Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC (2014)
Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. 54 (9-10) (2014)
Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54 (9-10) (2014)
Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels, Stefaan Decoutere
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. Microelectron. Reliab. 52 (9-10) (2012)
Dirk Wellekens, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere
High temperature behaviour of GaN-on-Si high power MISHEMT devices. ESSDERC (2012)
Denis Marcon, Xuanwu Kang, J. Viaene, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere, Robert P. Mertens, G. Borghs
GaN-based HEMTs tested under high temperature storage test. Microelectron. Reliab. 51 (9-11) (2011)
Wen-Chieh Wang, Zue-Der Huang, Geert Carchon, Abdelkarim Mercha, Stefaan Decoutere, Walter De Raedt, Chung-Yu Wu
45-nm Planar bulk-CMOS 23-GHz LNAs with high-Q above-IC inductors. ISCAS (2010)
Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken, Willy M. C. Sansen, Stefaan Decoutere
Identifying the Bottlenecks to the RF Performance of FinFETs. VLSI Design (2010)
Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. 49 (12) (2009)
Domagoj Siprak, Piet Wambacq, Bertrand Parvais, Abdelkarim Mercha, Michael Fulde, Jesenka Veledar Kruger, Morin Dehan, Stefaan Decoutere
FinFET RF receiver building blocks operating above 10 GHz. ESSCIRC (2009)
Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter
Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC (2009)
Jonathan Borremans, Piet Wambacq, Maarten Kuijk, Geert Carchon, Stefaan Decoutere
A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS. ISSCC (2008)
Piet Wambacq, Abdelkarim Mercha, Karen Scheir, Bob Verbruggen, Jonathan Borremans, Vincent De Heyn, Steven Thijs, Dimitri Linten, Geert Van der Plas, Bertrand Parvais, Morin Dehan, Stefaan Decoutere, Charlotte Soens, Nadine Collaert, Malgorzata Jurczak
Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies. ISSCC (2008)
Bertrand Parvais, Vaidyanathan Subramanian, Abdelkarim Mercha, Morin Dehan, Piet Wambacq, Willy Sansen, Guido Groeseneken, Stefaan Decoutere
FinFET technology for analog and RF circuits. ICECS (2007)
Piet Wambacq, Bob Verbruggen, Karen Scheir, Jonathan Borremans, Morin Dehan, Dimitri Linten, Vincent De Heyn, Geert Van der Plas, Abdelkarim Mercha, Bertrand Parvais, Cedric Gustin, Vaidyanathan Subramanian, Nadine Collaert, Malgorzata Jurczak, Stefaan Decoutere
The Potential of FinFETs for Analog and RF Circuit Applications. IEEE Trans. Circuits Syst. I Regul. Pap. (11) (2007)
Bertrand Parvais, S. Hu, Morin Dehan, Abdelkarim Mercha, Stefaan Decoutere
An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs. CICC (2007)
Geert Van der Plas, Stefaan Decoutere, Stéphane Donnay
A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process. ISSCC (2006)
Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. 46 (5-6) (2006)
Stefaan Decoutere, Piet Wambacq, Vaidy Subramanian, Jonathan Borremans, Abdelkarim Mercha
Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges. CICC (2006)
Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken
RF ESD protection strategies - the design and performance trade-off challenges. CICC (2005)
Olivier Dupuis, Xiao Sun, Geert Carchon, Philippe Soussan, Mattias Ferndahl, Stefaan Decoutere, Walter De Raedt
24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors. ESSCIRC (2005)
Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri, Javier Ramos, Abdelkarim Mercha, Snezana Jenei, Stéphane Donnay, Stefaan Decoutere
A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS. IEEE J. Solid State Circuits 40 (7) (2005)
Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Stefaan Decoutere, Florence Cubaynes
Test Structure Design for a Selected Frequency Range. IEICE Trans. Electron. (5) (2005)
Dimitri Linten, Xiao Sun, Steven Thijs, M. I. Natarajan, Abdelkarim Mercha, Geert Carchon, Piet Wambacq, Takeshi Nakaie, Stefaan Decoutere
Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors. CICC (2005)
Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Piet Wambacq, Morin Dehan, Lars Aspemyr, Andries J. Scholten, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt
Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors. IEEE J. Solid State Circuits 40 (9) (2005)
Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Lars Aspemyr, Andries J. Scholten, Piet Wambacq, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt
A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor. CICC (2004)
Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri, Javier Ramos, Abdelkarim Mercha, Snezana Jenei, Stéphane Donnay, Stefaan Decoutere
A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS. ESSCIRC (2004)
Snezana Jenei, Bart K. J. C. Nauwelaers, Stefaan Decoutere
Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors. IEEE J. Solid State Circuits 37 (1) (2002)
Jeroen A. Croon, Maarten Rosmeulen, Stefaan Decoutere, Willy Sansen, Herman E. Maes
An easy-to-use mismatch model for the MOS transistor. IEEE J. Solid State Circuits 37 (8) (2002)
M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere
Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. Microelectron. Reliab. 41 (12) (2001)