Enrico Sangiorgi

Publication Activity (10 Years)

Years Active: 1985-2024
Publications (10 Years): 10

Top Topics

Field Effect Transistors

Electron Microscopy

Top Venues

Microelectron. Reliab.

Publications

M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS (2024)
M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS (2022)
Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. IRPS (2020)
Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi
Characterization and Modeling of BTI in SiC MOSFETs. ESSDERC (2019)
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS (2019)
Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC (2019)
Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. (2018)
Marco Crescentini, Michele Biondi, Aldo Romani, Marco Tartagni, Enrico Sangiorgi
Optimum Design Rules for CMOS Hall Sensors. Sensors 17 (4) (2017)
Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. (2017)
Aldo Romani, Marco Tartagni, Enrico Sangiorgi
Doing a Lot with a Little: Micropower Conversion and Management for Ambient-Powered Electronics. Computer 50 (6) (2017)
Muthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models. Microelectron. J. 44 (2) (2013)
Raffaele De Rose, Antonio Malomo, Paolo Magnone, Felice Crupi, Giorgio Cellere, Marco Martire, Diego Tonini, Enrico Sangiorgi
A methodology to account for the finger interruptions in solar cell performance. Microelectron. Reliab. 52 (9-10) (2012)
Enrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs. ESSCIRC (2007)
Antonio Abramo, Franco Venturi, Enrico Sangiorgi, Jack M. Higman, Bruno Riccò
A numerical method to compute isotropic band models from anisotropic semiconductor band structures. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12 (9) (1993)
Franco Venturi, Enrico Sangiorgi, Rossella Brunetti, Wolfgang Quade, Carlo Jacoboni, Bruno Riccò
Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10 (10) (1991)
Enrico Sangiorgi
Latch-up in CMOS circuits: A review. Eur. Trans. Telecommun. 1 (3) (1990)
Franco Venturi, R. Kent Smith, Enrico Sangiorgi, Mark R. Pinto, Bruno Riccò
A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8 (4) (1989)
Enrico Sangiorgi, Bruno Riccò, Franco Venturi
: an efficient MOnte Carlo Simulator for MOS devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7 (2) (1988)
Enrico Sangiorgi, Mark R. Pinto, Stanley E. Swirhun, Robert W. Dutton
Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS Technology. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 4 (4) (1985)