Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
Steve StoffelsNiels PosthumaStefaan DecoutereBenoit BakerootAndrea Natale TallaricoEnrico SangiorgiClaudio FiegnaJ. ZhengX. MaMatteo BorgaElena FabrisMatteo MeneghiniEnrico ZanoniGaudenzio MeneghessoJuraj PriesolAlexander SatkaPublished in: IRPS (2019)