Andrea Natale Tallarico

Publication Activity (10 Years)

Years Active: 2017-2024
Publications (10 Years): 11

Top Topics

Dc Dc Converter

Electron Microscopy

Multiple Output

Power Consumption

Top Venues

Microelectron. Reliab.

Publications

M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS (2024)
M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS (2022)
Giuseppe Capasso, Mauro Zanuccoli, Andrea Natale Tallarico, Claudio Fiegna
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter. ESSDERC (2022)
Andrea Natale Tallarico, Susanna Reggiani, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors. IRPS (2020)
Matteo Pizzotti, Marco Crescentini, Andrea Natale Tallarico, Aldo Romani
An Integrated DC/DC Converter with Online Monitoring of Hot-Carrier Degradation. ICECS (2019)
Davide Cornigli, Andrea Natale Tallarico, Susanna Reggiani, Claudio Fiegna, Enrico Sangiorgi, Luis Sanchez, Carlos Valdivieso, Giuseppe Consentino, Felice Crupi
Characterization and Modeling of BTI in SiC MOSFETs. ESSDERC (2019)
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS (2019)
Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC (2019)
Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. (2018)
Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. (2017)
Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. (2017)