Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.
Isabella RossettoMatteo MeneghiniEleonora CanatoMarco BarbatoSteve StoffelsNiels PosthumaStefaan DecoutereAndrea Natale TallaricoGaudenzio MeneghessoEnrico ZanoniPublished in: Microelectron. Reliab. (2017)