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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.

Isabella RossettoMatteo MeneghiniEleonora CanatoMarco BarbatoSteve StoffelsNiels PosthumaStefaan DecoutereAndrea Natale TallaricoGaudenzio MeneghessoEnrico Zanoni
Published in: Microelectron. Reliab. (2017)
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