Paolo Magnone

Publication Activity (10 Years)

Years Active: 2007-2023
Publications (10 Years): 6

Top Topics

Power Consumption

Holonic Manufacturing Systems

Field Effect Transistors

Top Venues

Microelectron. Reliab.

IEEE Trans. Ind. Electron.

Publications

Massimo Vatalaro, H. Neill, F. Gity, Paolo Magnone, V. Maccaronio, C. Márquez, J. C. Galdon, F. Gamiz, Felice Crupi, P. Hurley, R. De Rose
-based devices for hardware security. CoRR (2023)
Guangyuan Liu, Tommaso Caldognetto, Paolo Mattavelli, Paolo Magnone
Suppression of Second-Order Harmonic Current for Droop-Controlled Distributed Energy Resource Converters in DC Microgrids. IEEE Trans. Ind. Electron. 67 (1) (2020)
Mohammad Mohammadi, Afshin Mirzaee, Paolo Magnone, Javad Shokrollahi Moghani, Paolo Mattavelli
Performance improvement of pulse width-amplitude modulation-based quasi-Z-source inverters: Analysis and implementation. Int. J. Circuit Theory Appl. 48 (10) (2020)
Guangyuan Liu, Aram Khodamoradi, Paolo Mattavelli, Tommaso Caldognetto, Paolo Magnone
Plug and Play DC-DC Converters for Smart DC Nanogrids with Advanced Control Ancillary Services. CAMAD (2018)
Paolo Magnone, Giacomo Barletta, A. Magrì
Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. Microelectron. Reliab. (2018)
Andrea Natale Tallarico, Susanna Reggiani, Paolo Magnone, Giuseppe Croce, Riccardo Depetro, P. Gattari, Enrico Sangiorgi, Claudio Fiegna
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. Microelectron. Reliab. (2017)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. 20 (8) (2012)
Raffaele De Rose, Antonio Malomo, Paolo Magnone, Felice Crupi, Giorgio Cellere, Marco Martire, Diego Tonini, Enrico Sangiorgi
A methodology to account for the finger interruptions in solar cell performance. Microelectron. Reliab. 52 (9-10) (2012)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Mitsuhiro Togo, N. Horiguchi, Guido Groeseneken
Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements. IEEE Trans. Circuits Syst. II Express Briefs (7) (2012)
Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer, Brice De Jaeger
Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements. IEEE Trans. Very Large Scale Integr. Syst. 19 (9) (2011)
Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS (2011)
Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer
Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits. ISCAS (2010)
Gino Giusi, Felice Crupi, Calogero Pace, Paolo Magnone
Full Model and Characterization of Noise in Operational Amplifier. IEEE Trans. Circuits Syst. I Regul. Pap. (1) (2009)
Paolo Magnone, Calogero Pace, Felice Crupi, Gino Giusi
Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics. Microelectron. Reliab. 47 (12) (2007)
Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone, Calogero Pace, Durga Misra, Cor Claeys
Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. Microelectron. Reliab. 47 (4-5) (2007)