Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling.
Felice CrupiMassimo AliotoJacopo FrancoPaolo MagnoneBen KaczerGuido GroesenekenJérôme MitardLiesbeth WittersThomas Y. HoffmannPublished in: IEEE Trans. Very Large Scale Integr. Syst. (2012)
Keyphrases
- logic circuits
- gate array
- low power
- power dissipation
- cmos technology
- high speed
- low voltage
- liquid crystal
- silicon dioxide
- low cost
- power consumption
- field effect transistors
- charge coupled device
- functional decomposition
- power system
- high impact
- tunnel diode
- digital signal processing
- high density
- real time
- electric field
- image sensor
- signal processing
- logic synthesis
- space charge
- metal oxide
- electrical properties
- operating conditions
- finite state machines
- data flow
- multistage